Samsung Electronics and Qualcomm announces Snapdragon 835, built on Samsung’s 10nm FinFET process

Samsung Electronics originally announced that they are building the industry’s first 10nm mobile processor back in October and today the company has confirmed that it is indeed manufacturing Qualcomm’s next generation Snapdragon processor. The new processor is called the Snapdragon 835, which little off from previous naming conventions like the 830 that many had expected.


At New York in a press event, Samsung and Snapdragon jointly announced that Qualcomm’s Snapdragon 835 will be manufactured on Samsung’s cutting-edge 10-nanometer FinFET process. The new 10-nanometer FinFET process will bring both performance and energy efficiency improvements to Qualcomm’s next generation processor.

“Using the new 10nm process node is expected to allow our premium tier Snapdragon 835 processor to deliver greater power efficiency and increase performance while also allowing us to add a number of new capabilities that can improve the user experience of tomorrow’s mobile devices.”  – Keith Kressin, senior vice president, product management, Qualcomm Technologies

According to Samsung, the new 10-nanometer FinFET process will provide a 30% percent increase in efficiency, combined with up to a 27% percent performance boost or a 40 percent reduction in power consumption. Of course, these results will vary based on the processor’s architecture and real-world usage, but sure promising to be a better offering for next year’s smartphones.